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1 physics of semiconductors
English-Russian electronics dictionary > physics of semiconductors
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2 physics of semiconductors
The New English-Russian Dictionary of Radio-electronics > physics of semiconductors
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3 physics
б) физические явления; физические процессыв) физическая сущность; физический механизм; физическая основа- physics of critical state
- physics of dielectrics
- physics of ferroelecricity
- physics of liquid crystals
- physics of magnetic phenomena
- physics of metals
- physics of polymers
- physics of semiconductors
- physics of superconductivity
- applied physics
- biological physics
- crystal physics
- electron physics
- experimental physics
- high-energy physics
- industrial physics
- low-temperature physics
- mathematical physics
- molecular physics
- plasma physics
- pure physics
- radio physics
- solid-state physics
- statistical physics
- technical physics
- theoretical physics -
4 physics
б) физические явления; физические процессыв) физическая сущность; физический механизм; физическая основа•- biological physics
- crystal physics
- electron physics
- experimental physics
- high-energy physics
- industrial physics
- low-temperature physics
- mathematical physics
- molecular physics
- physics of condensed matters
- physics of critical state
- physics of dielectrics
- physics of ferroelecricity
- physics of liquid crystals
- physics of magnetic phenomena
- physics of metals
- physics of polymers
- physics of semiconductors
- physics of superconductivity
- plasma physics
- pure physics
- radio physics
- solid-state physics
- statistical physics
- technical physics
- theoretical physicsThe New English-Russian Dictionary of Radio-electronics > physics
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5 физика полупроводников
Русско-английский словарь по электронике > физика полупроводников
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6 физика полупроводников
Русско-английский словарь по радиоэлектронике > физика полупроводников
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7 Brattain, Walter Houser
SUBJECT AREA: Electronics and information technology[br]b. 10 February 1902 Amoy, China (now Hsiamen)d. 13 October 1987 Seattle, Washington, USA[br]American physicist and co-inventor of the transistor.[br]Born of American parents in China, he was brought up on a cattle-ranch and graduated from Whitman College, Walla Walla, Washington, in 1924. He then went to the University of Minnesota, where he obtained a PhD in 1929. The same year he joined the staff of Bell Telephone Laboratories as a research physicist and there, during the First World War, he worked on the magnetic detection of submarines. For his work on the invention and development of the transistor, he was awarded the 1956 Nobel Prize for Physics jointly with John Bardeen and William Shockley. He retired in 1967. His interests have been concentrated on the properties of semiconductors such as germanium and silicon.[br]Principal Honours and DistinctionsNobel Prize for Physics (jointly with Bardeen and Shockley) 1956.Further ReadingIsaacs and E.Martin (eds), 1985, Longmans Dictionary of 20th Century Biography.IMcNBiographical history of technology > Brattain, Walter Houser
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8 Shockley, William Bradford
[br]b. 13 February 1910 London, Englandd. 12 August 1989, Palo Alto, California, USA.[br]American physicist who developed the junction transistor from the point contact transistor and was joint winner (with John Bardeen and Walter H. Brattain) of the 1956 Nobel Prize for physics.[br]The son of a mining engineer, Shockley graduated from the California Institute of Technology in 1932 and in 1936 obtained his PhD at the Massachusetts Institute of Technology. In that year, he joined the staff of Bell Telephone Laboratories.Since the early days of radio, crystals of silicon or similar materials had been used to rectify alternating current supply until these were displaced by thermionic valves or tubes. Shockley, with Bardeen and Brattain, found that crystals of germanium containing traces of certain impurities formed far better rectifiers than crystals of the material in its pure form. The resulting device, the transistor, could also be used to amplify the current; its name is derived from its ability to transfer current across a resistor. The transistor, being so much smaller than the thermionic valve which it replaced, led to the miniaturization of electronic appliances. Another advantage was that a transistorized device needed no period of warming up, such as was necessary with a thermionic valve before it would operate. The dispersal of the heat generated by a multiplicity of thermionic valves such as were present in early computers was another problem obviated by the advent of the transistor.Shockley was responsible for much development in the field of semiconductors. He was Deputy Director of the Weapons Systems Evaluation Group of the US Department of Defense (1954–5), and in 1963 he was appointed the first Poniatoff Professor of Engineering Science at Stanford University, California. During the late 1960s Shockley became a controversial figure for expressing his unorthodox views on genetics, such as that black people were inherently less intelligent than white people, and that the population explosion spread "bad" genes at the expense of "good" genes; he supported the idea of a sperm bank from Nobel Prize winners, voluntary sterilization and the restriction of interracial marriages.[br]Principal Honours and DistinctionsNobel Prize for Physics 1956.Further ReadingI.Asimov (ed.), 1982, Biographical Encyclopedia of Science and Technology, New York: Doubleday \& Co.IMcNBiographical history of technology > Shockley, William Bradford
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9 photoelectron angular distribution
Универсальный русско-английский словарь > photoelectron angular distribution
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10 photoelectron holography
Универсальный русско-английский словарь > photoelectron holography
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11 время накопления
1) Military: accumulation time (данных)2) Engineering: acquisition interval, storage time (заряда в полупроводниковых приборах)3) Physics: accumulation time4) Semiconductors: storage time (заряда)5) General subject: storage tiltmeter -
12 вторично-электронный умножитель
1) Military: secondary( emission electron) multiplier2) Engineering: electron multiplier, electron multiplier tube, electron-multiplier tube, multiplier tube, secondary-electron multiplier, secondary-emission multiplier3) Physics: secondary emission electron multiplier4) Electronics: multiplier5) Semiconductors: secondary electron multiplier6) Makarov: secondary multiplierУниверсальный русско-английский словарь > вторично-электронный умножитель
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13 делокализация
1) Physics: delocalization2) Semiconductors: delocalisation -
14 дефект упаковки
1) Engineering: imperfect packing, packing defect, stacking fault dislocation2) Economy: defect in packing, fault of packing3) Physics: stacking fault4) Silicates: stacking fault (кристаллической структуры)5) Perfume: packaging defect6) Semiconductors: stacking defect7) Makarov: stacking fault (в кристалле) -
15 канделла
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16 квантовая точка
1) Physics: quantum dot2) Semiconductors: quantum box -
17 коллективные возбуждения
1) Physics: collective modes2) Electronics: collective waves3) Semiconductors: collective exitationsУниверсальный русско-английский словарь > коллективные возбуждения
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18 куперовская пара
1) Engineering: superconducting pair2) Physics: superconducting electron pair3) Microelectronics: cooper pair4) Semiconductors: Copper pair -
19 метод Ван дер Пау
1) Semiconductors: Van der Pauw method2) Solid-state physics: (измерения уд. сопротивления тонких плёнок) van der Pauw method -
20 пробный заряд
1) Engineering: test load2) Physics: trial charge3) Electronics: test charge4) Power engineering: test characteristic5) Semiconductors: probe charge
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